| PART |
Description |
Maker |
| GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15 |
55 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| MSAGX75L60A |
LJT 8C 8#20 PIN WALL RECP 75 A, 600 V, N-CHANNEL IGBT
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A)
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| MSAHX75L60C |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| MSAGX75F60A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| MSAGX60F60A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Microsemi Corporation
|
| SSM28G45EM |
N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
|
Silicon Standard Corp.
|
| 3N50K-MK 3N50KG-TA3-T 3N50KG-TF1-T 3N50KG-TF2-T 3N |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Unisonic Technologies
|
| MSAGZ52F120A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
